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| inchange semiconductor product specification silicon npn power transistors 2SD1563A description ? ? with to-126 package ? complement to type 2sb1086a ? wide area of safe operation ? high breakdown voltage :bv ceo =160v(min) applications ? for low frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 160 v v ceo collector-emitter voltage open base 160 v v ebo emitter-base voltage open collector 5 v i c collector current 1.5 a i cm collector current-peak 3.0 a t c =25 ?? 10 p c collector power dissipation t a =25 ?? 1.2 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SD1563A characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma ;i b =0 160 v v (br)ebo emitter-base breakdown voltage i e =50 | a ;i c =0 5 v v (br)cbo collector-base breakdown voltage i c =50 | a ;i e =0 160 v v cesat collector-emitter saturation voltage i c =1.0a ;i b =0.1a 2.0 v v besat base-emitter saturation voltage i c =1.0a ;i b =0.1a 1.5 v i cbo collector cut-off current v cb =120v; i e =0 1.0 | a i ebo emitter cut-off current v eb =4v; i c =0 1.0 | a h fe dc current gain i c =0.1a ; v ce =5v 56 270 f t transition frequency i c =0.1a ; v ce =5v 80 mhz c ob output capacitance i e =0 ; v cb =10v;f=1mhz 20 pf ? h fe classifications n p q 56-120 82-180 120-270 inchange semiconductor product specification 3 silicon npn power transistors 2SD1563A package outline fig.2 outline dimensions |
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